feat: Add DoclingParseV4 backend, using high-level docling-parse API (#905)

* Add DoclingParseV3 backend implementation

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Use docling-core with docling-parse types

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Fixes and test updates

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Fix streams

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Fix streams

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Reset tests

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* update test cases

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* update test units

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Add back DoclingParse v1 backend, pipeline options

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Update locks

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* fix: update docling-core to 2.22.0

Update dependency library docling-core to latest release 2.22.0
Fix regression tests and ground truth files

Signed-off-by: Cesar Berrospi Ramis <75900930+ceberam@users.noreply.github.com>

* Ground-truth files updated

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Update tests, use TextCell.from_ocr property

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Text fixes, new test data

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Rename docling backend to v4

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Test all backends, fixes

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Reset all tests to use docling-parse v1 for now

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* Fixes for DPv4 backend init, better test coverage

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

* test_input_doc use default backend

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>

---------

Signed-off-by: Christoph Auer <cau@zurich.ibm.com>
Signed-off-by: Cesar Berrospi Ramis <75900930+ceberam@users.noreply.github.com>
Co-authored-by: Cesar Berrospi Ramis <75900930+ceberam@users.noreply.github.com>

tests/data/groundtruth/docling_v2/ipa20180000016.md

@@ -1,20 +1,20 @@
 # LIGHT EMITTING DEVICE AND PLANT CULTIVATION METHOD
 
-## ABSTRACT
+### ABSTRACT
 
 Provided is a light emitting device that includes a light emitting element having a light emission peak wavelength ranging from 380 nm to 490 nm, and a fluorescent material excited by light from the light emitting element and emitting light having at a light emission peak wavelength ranging from 580 nm or more to less than 680 nm. The light emitting device emits light having a ratio R/B of a photon flux density R to a photon flux density B ranging from 2.0 to 4.0 and a ratio R/FR of the photon flux density R to a photon flux density FR ranging from 0.7 to 13.0, the photon flux density R being in a wavelength range of 620 nm or more and less than 700 nm, the photon flux density B being in a wavelength range of 380 nm or more and 490 nm or less, and the photon flux density FR being in a wavelength range of 700 nm or more and 780 nm or less.
 
-## CROSS-REFERENCE TO RELATED APPLICATION
+### CROSS-REFERENCE TO RELATED APPLICATION
 
 The application claims benefit of Japanese Patent Application No. 2016-128835 filed on Jun. 29, 2016, the entire disclosure of which is hereby incorporated by reference in its entirety.
 
-## BACKGROUND
+### BACKGROUND
 
-## Technical Field
+### Technical Field
 
 The present disclosure relates to a light emitting device and a plant cultivation method.
 
-## Description of Related Art
+### Description of Related Art
 
 With environmental changes due to climate change and other artificial disruptions, plant factories are expected to increase production efficiency of vegetables and be capable of adjusting production in order to make it possible to stably supply vegetables. Plant factories that are capable of artificial management can stably supply clean and safe vegetables to markets, and therefore are expected to be the next-generation industries.
 
@@ -26,7 +26,7 @@ In plant factories, the light source used in place of sunlight affect a growth p
 
 For example, Japanese Unexamined Patent Publication No. 2009-125007 discloses a plant growth method. In this method, the plants is irradiated with light emitted from a first LED light emitting element and/or a second LED light emitting element at predetermined timings using a lighting apparatus including the first LED light emitting element emitting light having a wavelength region of 625 to 690 nm and the second LED light emitting element emitting light having a wavelength region of 420 to 490 nm in order to emit lights having sufficient intensities and different wavelengths from each other.
 
-## SUMMARY
+### SUMMARY
 
 However, even though plants are merely irradiated with lights having different wavelengths as in the plant growth method disclosed in Japanese Unexamined Patent Publication No. 2009-125007, the effect of promoting plant growth is not sufficient. Further improvement is required in promotion of plant growth.
 
@@ -40,7 +40,7 @@ A second embodiment of the present disclosure is a plant cultivation method incl
 
 According to embodiments of the present disclosure, a light emitting device capable of promoting growth of plants and a plant cultivation method can be provided.
 
-## BRIEF DESCRIPTION OF THE DRAWINGS
+### BRIEF DESCRIPTION OF THE DRAWINGS
 
 FIG. 1 is a schematic cross sectional view of a light emitting device according to an embodiment of the present disclosure.
 
@@ -50,11 +50,11 @@ FIG. 3 is a graph showing fresh weight (edible part) at the harvest time of each
 
 FIG. 4 is a graph showing nitrate nitrogen content in each plant grown by irradiating the plant with light from exemplary light emitting devices according to embodiments of the present disclosure and a comparative light emitting device.
 
-## DETAILED DESCRIPTION
+### DETAILED DESCRIPTION
 
 A light emitting device and a plant cultivation method according to the present invention will be described below based on an embodiment. However, the embodiment described below only exemplifies the technical concept of the present invention, and the present invention is not limited to the light emitting device and plant cultivation method described below. In the present specification, the relationship between the color name and the chromaticity coordinate, the relationship between the wavelength range of light and the color name of monochromatic light follows JIS Z8110.
 
-### Light Emitting Device
+#### Light Emitting Device
 
 An embodiment of the present disclosure is a light emitting device including a light emitting element having a light emission peak wavelength in a range of 380 nm or more and 490 nm or less (hereinafter sometimes referred to as a “region of from near ultraviolet to blue color”), and a first fluorescent material emitting light having at least one light emission peak wavelength in a range of 580 nm or more and less than 680 nm by being excited by light from the light emitting element. The light emitting device emits light having a ratio R/B of a photon flux density R to a photon flux density B within a range of 2.0 or more and 4.0 or less, and a ratio R/FR of the photon flux density R to a photon flux density FR within a range of 0.7 or more and 13.0 or less, where the photon flux density R is the number of light quanta (μmol·m⁻²·g⁻¹) incident per unit time and unit area in a wavelength range of 620 nm or more and less than 700 nm, the photon flux density B is the number of light quanta (μmol·m⁻²·g⁻¹) incident per unit time and unit area in a wavelength range of 380 nm or more and 490 nm or less, and the photon flux density FR is the number of light quanta (μmol·m⁻²·g⁻¹) incident per unit time and unit area in a wavelength range of 700 nm or more and 780 nm or less.
 
@@ -84,7 +84,7 @@ For the above reasons, nitrogen is one of nutrients necessary for growth of plan
 
 It is preferred that the light emitting device 100 further include the second fluorescent material 72 having at least one light emission peak wavelength in a range of 680 nm or more and 800 nm or less by being excited by light from the light emitting element 10, wherein the R/FR ratio is within a range of 0.7 or more and 5.0 or less. The R/FR ratio is more preferably within a range of 0.7 or more and 2.0 or less.
 
-### Light Emitting Element
+#### Light Emitting Element
 
 The light emitting element 10 is used as an excitation light source, and is a light emitting element emitting light having a light emission peak wavelength in a range of 380 nm or more and 490 nm or less. As a result, a stable light emitting device having high efficiency, high linearity of output to input and strong mechanical impacts can be obtained.
 
@@ -92,7 +92,7 @@ The range of the light emission peak wavelength of the light emitting element 10
 
 The half value width of emission spectrum of the light emitting element 10 can be, for example, 30 nm or less.
 
-### Fluorescent Member
+#### Fluorescent Member
 
 The fluorescent member 50 used in the light emitting device 100 preferably includes the first fluorescent material 71 and a sealing material, and more preferably further includes the second fluorescent material 72. A thermoplastic resin and a thermosetting resin can be used as the sealing material. The fluorescent member 50 may contain other components such as a filler, a light stabilizer and a colorant, in addition to the fluorescent material and the sealing material. Examples of the filler include silica, barium titanate, titanium oxide and aluminum oxide.
 
@@ -100,7 +100,7 @@ The content of other components other than the fluorescent material 70 and the s
 
 The total content of the fluorescent material 70 in the fluorescent member 50 can be, for example, 5 parts by mass or more and 300 parts by mass or less, per 100 parts by mass of the sealing material. The total content is preferably 10 parts by mass or more and 250 parts by mass or less, more preferably 15 parts by mass or more and 230 parts by mass or less, and still more preferably 15 parts by mass or more and 200 parts by mass or less. When the total content of the fluorescent material 70 in the fluorescent member 50 is within the above range, the light emitted from the light emitting element 10 can be efficiently subjected to wavelength conversion in the fluorescent material 70.
 
-### First Fluorescent Material
+#### First Fluorescent Material
 
 The first fluorescent material 71 is a fluorescent material that is excited by light from the light emitting element 10 and emits light having at least one light emission peak wavelength in a range of 580 nm or more and less than 680 nm. Examples of the first fluorescent material 71 include an Mn⁴⁺-activated fluorogermanate fluorescent material, an Eu²⁺-activated nitride fluorescent material, an Eu²⁺-activated alkaline earth sulfide fluorescent material and an Mn⁴⁺-activated halide fluorescent material. The first fluorescent material 71 may use one selected from those fluorescent materials and may use a combination of two or more thereof. The first fluorescent material preferably contains an Eu²⁺-activated nitride fluorescent material and an Mn⁴⁺-activated fluorogermanate fluorescent material.
 
@@ -138,7 +138,7 @@ The first fluorescent material 71 preferably contains at least two fluorescent m
 
 In the case where the first fluorescent material 71 contains at least two fluorescent materials and two fluorescent materials are a MGF fluorescent material and a CASN fluorescent material, where a compounding ratio thereof (MGF fluorescent material:CASN fluorescent material) is preferably in a range of 50:50 or more and 99:1 or less, more preferably in a range of 60:40 or more and 97:3 or less, and still more preferably in a range of 70:30 or more and 96:4 or less, in mass ratio. In the case where the first fluorescent material contains two fluorescent materials, when those fluorescent materials are a MGF fluorescent material and a CASN fluorescent material and the mass ratio thereof is within the aforementioned range, the light emitted from the light emitting element 10 can be efficiently subjected to wavelength conversion in the first fluorescent material 71. In addition, the R/B ratio can be adjusted to within a range of 2.0 or more and 4.0 or less, and the R/FR ratio is easy to be adjusted to within a range of 0.7 or more and 13.0 or less.
 
-### Second Fluorescent Material
+#### Second Fluorescent Material
 
 The second fluorescent material 72 is a fluorescent material that is excited by the light from the light emitting element 10 and emits light having at least one light emission peak wavelength in a range of 680 nm or more and 800 nm or less.
 
@@ -160,25 +160,25 @@ In the second fluorescent material 72, the value of the parameter y is preferabl
 
 The parameter x is an activation amount of Ce and the value of the parameter x is in a range of exceeding 0.0002 and less than 0.50 (0.0002<x<0.50), and the parameter y is an activation amount of Cr. When the value of the parameter y is in a range of exceeding 0.0001 and less than 0.05 (0.0001<y<0.05), the activation amount of Ce and the activation amount of Cr that are light emission centers contained in the crystal structure of the fluorescent material are within optimum ranges, the decrease of light emission intensity due to the decrease of light emission center can be suppressed, the decrease of light emission intensity due to concentration quenching caused by the increase of the activation amount can be suppressed, and light emission intensity can be enhanced.
 
-### Production Method of Second Fluorescent Material
+#### Production Method of Second Fluorescent Material
 
 A method for producing the second fluorescent material 72 includes the following method.
 
 A compound containing at least one rare earth element Ln selected from the group consisting of rare earth elements excluding Ce, a compound containing at least one element M selected from the group consisting of Al, Ga, and In, a compound containing Ce and a compound containing Cr are mixed such that, when the total molar composition ratio of the M is taken as 5 as the standard, in the case where the total molar composition ratio of Ln, Ce, and Nd is 3, the molar ratio of Ce is a product of 3 and a value of a parameter x, and the molar ratio of Cr is a product of 3 and a value of a parameter y, the value of the parameter x is in a range of exceeding 0.0002 and less than 0.50 and the value of the parameter y is in a range of exceeding 0.0001 and less than 0.05, thereby obtaining a raw material mixture, the raw material mixture is heat-treated, followed by classification and the like, thereby obtaining the second fluorescent material.
 
-### Compound Containing Rare Earth Element Ln
+#### Compound Containing Rare Earth Element Ln
 
 Examples of the compound containing rare earth element Ln include oxides, hydroxides, nitrides, oxynitrides, fluorides, and chlorides, that contain at least one rare earth element Ln selected from the group consisting of rare earth elements excluding Ce. Those compounds may be hydrates. At least a part of the compounds containing rare earth element may use a metal simple substance or an alloy containing rare earth element. The compound containing rare earth element is preferably a compound containing at least one rare earth element Ln selected from the group consisting of Y, Gd, Lu, La, Tb, and Pr. The compound containing rare earth element may be used alone or may be used as a combination of at least two compounds containing rare earth element.
 
 The compound containing rare earth element is preferably an oxide that does not contain elements other than the target composition, as compared with other materials. Examples of the oxide specifically include Y₂O₃, Gd₂O₃, Lu₂O₃, La₂O₃, Tb₄O₇ and Pr₆O₁₁.
 
-### Compound Containing M
+#### Compound Containing M
 
 Examples of the compound containing at least one element M selected from the group consisting of Al, Ga, and In include oxides, hydroxides, nitrides, oxynitrides, fluorides, and chlorides, that contain Al, Ga, or In. Those compounds may be hydrates. Furthermore, Al metal simple substance, Ga metal simple substance, In metal simple substance, Al alloy, Ga alloy or In alloy may be used, and metal simple substance or an alloy may be used in place of at least a part of the compound. The compound containing Al, Ga, or In may be used alone or may be used as a combination of two or more thereof. The compound containing at least one element selected from the group consisting of Al, Ga, and In is preferably an oxide. The reason for this is that an oxide that does not contain elements other than the target composition, as compared with other materials, and a fluorescent material having a target composition are easy to be obtained. When a compound containing elements other than the target composition has been used, residual impurity elements are sometimes present in the fluorescent material obtained. The residual impurity element becomes a killer factor in light emission, leading to the possibility of remarkable decrease of light emission intensity.
 
 Examples of the compound containing Al, Ga, or In specifically include Al₂O₃, Ga₂O₃, and In₂O₃.
 
-### Compound Containing Ce and Compound Containing Cr
+#### Compound Containing Ce and Compound Containing Cr
 
 Examples of the compound containing Ce or the compound containing Cr include oxides, hydroxides, nitrides, fluorides, and chlorides, that contain cerium (Ce) or chromium (Cr). Those compounds may be hydrates. Ce metal simple substance, Ce alloy, Cr metal simple substance, or Cr alloy may be used, and a metal simple substance or an alloy may be used in place of a part of the compound. The compound containing Ce or the compound containing Cr may be used alone or may be used as a combination of two or more thereof. The compound containing Ce or the compound containing Cr is preferably an oxide. The reason for this is that an oxide that does not contain elements other than the target composition, as compared with other materials, and a fluorescent material having a target composition are easy to be obtained. When a compound containing elements other than the target composition has been used, residual impurity elements are sometimes present in the fluorescent material obtained. The residual impurity element becomes a killer factor in light emission, leading to the possibility of remarkable decrease of light emission intensity.
 
@@ -204,7 +204,7 @@ The atmosphere for heat-treating the raw material mixture is an inert atmosphere
 
 The fluorescent material obtained may be subjected to post-treatment steps such as a solid-liquid separation by a method such as cleaning or filtration, drying by a method such as vacuum drying, and classification by dry sieving. After those post-treatment steps, a fluorescent material having a desired average particle diameter is obtained.
 
-### Other Fluorescent Materials
+#### Other Fluorescent Materials
 
 The light emitting device 100 may contain other kinds of fluorescent materials, in addition to the first fluorescent material 71.
 
@@ -250,21 +250,21 @@ GdAlO₃:Cr (x)
 
 The light emitting device 100 can be utilized as a light emitting device for plant cultivation that can activate photosynthesis of plants and promote growth of plants so as to have favorable form and weight.
 
-### Plant Cultivation Method
+#### Plant Cultivation Method
 
 The plant cultivation method of one embodiment of the present disclosure is a method for cultivating plants, including irradiating plants with light emitted from the light emitting device 100. In the plant cultivation method, plants can be irradiated with light from the light emitting device 100 in plant factories that are completely isolated from external environment and make it possible for artificial control. The kind of plants is not particularly limited. However, the light emitting device 100 of one embodiment of the present disclosure can activate photosynthesis of plants and promote growth of plants such that a stem, a leaf, a root, a fruit have favorable form and weight, and therefore is preferably applied to cultivation of vegetables, flowers that contain much chlorophyll performing photosynthesis. Examples of the vegetables include lettuces such as garden lettuce, curl lettuce, Lamb's lettuce, Romaine lettuce, endive, Lollo Rosso, Rucola lettuce, and frill lettuce; Asteraceae vegetables such as “shungiku” (chrysanthemum coronarium); morning glory vegetables such as spinach; Rosaceae vegetables such as strawberry; and flowers such as chrysanthemum, gerbera, rose, and tulip.
 
-## EXAMPLES
+### EXAMPLES
 
 The present invention is further specifically described below by Examples and Comparative Examples.
 
-## Examples 1 to 5
+### Examples 1 to 5
 
-### First Fluorescent Material
+#### First Fluorescent Material
 
 Two fluorescent materials of fluorogarmanate fluorescent material that is activated by Mn⁴⁺, having a light emission peak at 660 nm and fluorescent material containing silicon nitride that are activated by Eu²⁺, having a light emission peak at 660 nm were used as the first fluorescent material 71. In the first fluorescent material 71, a mass ratio of a MGF fluorescent material to a CASN fluorescent material (MGF:CASN) was 95:5.
 
-### Second Fluorescent Material
+#### Second Fluorescent Material
 
 Fluorescent material that is obtained by the following production method was used as the second fluorescent material 72.
 
@@ -272,7 +272,7 @@ Fluorescent material that is obtained by the following production method was use
 
 The raw material mixture obtained was placed in an alumina crucible, and a lid was put on the alumina crucible. The raw material mixture was heat-treated at 1,500° C. for 10 hours in a reducing atmosphere of H₂: 3 vol % and N₂: 97 vol %. Thus, a calcined product was obtained. The calcined product was passed through a dry sieve to obtain a second fluorescent material. The second fluorescent material obtained was subjected to composition analysis by ICP-AES emission spectrometry using an inductively coupled plasma emission analyzer (manufactured by Perkin Elmer). The composition of the second fluorescent material obtained was (Y₀.₉₇₇Ce₀.₀₀₉Cr₀.₀₁₄)₃Al₅O₁₂ (hereinafter referred to as “YAG: Ce, Cr”).
 
-### Light Emitting Device
+#### Light Emitting Device
 
 Nitride semiconductor having a light emission peak wavelength of 450 nm was used as the light emitting element 10 in the light emitting device 100.
 
@@ -280,17 +280,17 @@ Silicone resin was used as a sealing material constituting the fluorescent membe
 
 The resin composition was poured on the light emitting element 10 of a depressed portion of the molded article 40 to fill the depressed portion, and heated at 150° C. for 4 hours to cure the resin composition, thereby forming the fluorescent member 50. Thus, the light emitting device 100 as shown in FIG. 1 was produced in each of Examples 1 to 5.
 
-## Comparative Example 1
+### Comparative Example 1
 
 A light emitting device X including a semiconductor light emitting element having a light emission peak wavelength of 450 nm and a light emitting device Y including a semiconductor light emitting element having a light emission peak length of 660 nm were used, and the R/B ratio was adjusted to 2.5.
 
-### Evaluation
+#### Evaluation
 
-### Photon Flux Density
+#### Photon Flux Density
 
 Photon flux densities of lights emitted from the light emitting device 100 used in Examples 1 to 5 and the light emitting devices X and Y used in Comparative Example 1 were measured using a photon measuring device (LI-250A, manufactured by Li-COR). The photon flux density B, the photon flux density R, and the photon flux density FR of lights emitted from the light emitting devices used in each of the Examples and Comparative Example; the R/B ratio; and the R/FR ratio are shown in Table 1. FIG. 2 shows spectra showing the relationship between a wavelength and a relative photon flux density, in the light emitting devices used in each Example and Comparative Example.
 
-### Plant Cultivation Test
+#### Plant Cultivation Test
 
 The plant cultivation method includes a method of conducting by “growth period by RGB light source (hereinafter referred to as a first growth period)” and “growth period by light source for plant growth (hereinafter referred to as a second growth period)” using a light emitting device according to an embodiment of the present disclosure as a light source.
 
@@ -306,21 +306,21 @@ The cultivation test was specifically conducted by the following method.
 
 Romaine lettuce (green romaine, produced by Nakahara Seed Co., Ltd.) was used as cultivation plant.
 
-### First Growth Period
+#### First Growth Period
 
 Urethane sponges (salad urethane, manufactured by M Hydroponic Research Co., Ltd.) having Romaine lettuce seeded therein were placed side by side on a plastic tray, and were irradiated with light from RGB-LED light source (manufactured by Shibasaki Inc.) to cultivate plants. The plants were cultivated for 16 days under the conditions of room temperature: 22 to 23° C., humidity: 50 to 60%, photon flux density from light emitting device: 100 μmol·m⁻²·s⁻¹ and daytime hour: 16 hours/day. Only water was given until germination, and after the germination (about 4 days later), a solution obtained by mixing Otsuka House #1 (manufactured by Otsuka Chemical Co., Ltd.) and Otsuka House #2 (manufactured by Otsuka Chemical Co., Ltd.) in a mass ratio of 3:2 and dissolving the mixture in water was used as a nutrient solution (Otsuka Formulation A). Conductivity of the nutrient was 1.5 ms·cm⁻¹.
 
-### Second Growth Period
+#### Second Growth Period
 
 After the first growth period, the plants were irradiated with light from the light emitting devices of Examples 1 to 5 and Comparative Example 1, and were subjected to hydroponics.
 
 The plants were cultivated for 19 days under the conditions of room temperature: 22 to 24° C., humidity: 60 to 70%, CO₂ concentration: 600 to 700 ppm, photon flux density from light emitting device: 125 μmol·m⁻²·s⁻¹ and daytime hour: 16 hours/day. Otsuka Formulation A was used as the nutrient solution. Conductivity of the nutrient was 1.5 ms·cm⁻¹. The values of the R/B and R/FR ratios of light for plant irradiation from each light emitting device in the second growth period are shown in Table 1.
 
-### Measurement of Fresh Weight (Edible Part)
+#### Measurement of Fresh Weight (Edible Part)
 
 The plants after cultivation were harvested, and wet weights of a terrestrial part and a root were measured. The wet weight of a terrestrial part of each of 6 cultivated plants having been subjected to hydroponics by irradiating with light from the light emitting devices of Examples 1 to 5 and Comparative Example 1 was measured as a fresh weight (edible part) (g). The results obtained are shown in Table 1 and FIG. 3.
 
-### Measurement of Nitrate Nitrogen Content
+#### Measurement of Nitrate Nitrogen Content
 
 The edible part (about 20 g) of each of the cultivated plants, from which a foot about 5 cm had been removed, was frozen with liquid nitrogen and crushed with a juice mixer (laboratory mixer LM-PLUS, manufactured by Osaka Chemical Co., Ltd.) for 1 minute. The resulting liquid was filtered with Miracloth (manufactured by Milipore), and the filtrate was centrifuged at 4° C. and 15,000 rpm for 5 minutes. The nitrate nitrogen content (mg/100 g) in the cultivated plant in the supernatant was measured using a portable reflection photometer system (product name: RQ flex system, manufactured by Merck) and a test paper (product name: Reflectoquant (registered trade mark), manufactured by Kanto Chemical Co., Inc.). The results are shown in Table 1 and FIG. 4.
 
@@ -355,7 +355,7 @@ In addition, in the foregoing Detailed Description, various features may be grou
 
 The above disclosed subject matter shall be considered illustrative, and not restrictive, and the appended claims are intended to cover all such modifications, enhancements, and other embodiments which fall within the true spirit and scope of the present disclosure. Thus, to the maximum extent allowed by law, the scope of the present disclosure may be determined by the broadest permissible interpretation of the following claims and their equivalents, and shall not be restricted or limited by the foregoing detailed description.
 
-## CLAIMS
+### CLAIMS
 
 1. A light emitting device comprising: a light emitting element having a light emission peak wavelength in a range of 380 nm or more and 490 nm or less; and a fluorescent material that is excited by light from the light emitting element and emits light having at least one light emission peak wavelength in a range of 580 nm or more and less than 680 nm, wherein the light emitting device emits light having a ratio R/B of a photon flux density R to a photon flux density B within a range of 2.0 or more and 4.0 or less, and a ratio R/FR of the photon flux density R to a photon flux density FR within a range of 0.7 or more and 13.0 or less, wherein the photon flux density R is in a wavelength range of 620 nm or more and less than 700 nm, the photon flux density B is in a wavelength range of 380 nm or more and 490 nm or less, and the photon flux density FR is in a wavelength range of 700 nm or more and 780 nm or less.